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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4252 DESCRIPTION *High Current-Gain Bandwidth Product fT = 2.1 GHz TYP. *Low Output CapacitanceCOB = 1.1 pF TYP. APPLICATIONS *Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 15 mA PC 0.1 W TJ 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4252 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V hFE DC Current Gain IC= 5mA ; VCE= 10V 40 250 fT Current-Gain--Bandwidth Product IC= 5mA;VCE= 10V ; f= 500MHz 1.5 2.1 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.1 1.4 pF rbb' * CC Base Time Constant IC= 5mA ; VCB= 10V;f= 30MHz 4.3 10 ps isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4252 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4252 isc Websitewww.iscsemi.cn 4 |
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